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    Please use this identifier to cite or link to this item: https://ir.fy.edu.tw:8080/ir/handle/987654321/3147


    Title: High Quality Microwave Zr0.8Sn0.2TiO4 Dielectric Thin Film Prepared by Sol–Gel Method
    Authors: Ho, Yung-Shou;Weng,Min-Hang;Wang,Shuen-Shian
    Contributors: 輔英科技大學 應用化學及材料科學系
    Keywords: microstructure;thin film;sol–gel;microwave
    Date: 2005-07-01
    Issue Date: 2010-09-28 14:28:18 (UTC+8)
    Abstract: High-quality zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films are deposited along the (100) plane on a p-type Si substrate by the sol–gel method. The effects of two different heat treatment temperatures, 250 and 450°C, for organic burn-out between each spin coating on the crystal structure, morphology, roughness and thickness of the films are investigated. X-ray diffraction confirms a pronounced preferred orientation in thinner films and a polycrystalline structure in thicker films. Microstructure analyses by scanning electronic microscopy (SEM) and atomic force microscopy (AFM) prove that a high-quality ZST film approximately 75 nm thick with a smooth surface (surface roughness of 4 nm) is obtained under suitable processing conditions.
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS 44(7A),5125-5128
    Appears in Collections:[應用化學及材料科學系] 期刊論文

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